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MPCVD EQUIPMENT

MPCVD Growth Systems

Gen-4.5 and Gen-5 systems available, in-house microwave source, MTBF >10,000 h.

ENTASK MPCVD diamond growth system

GENERATIONS

Gen-4 / Gen-4.5 / Gen-5 Systems

We currently lead sales with Gen-4.5 and Gen-5 — Gen-5 offers a larger growth stage and higher output.

ParameterGen-4Gen-4.5Gen-5
AvailabilityClassicIn productionIn production
Frequency2450MHz2450MHz2450MHz
Power10kW10kW10-15kW
Growth stage92mm102mm120mm
Max growth thickness12mm15mm15mm
Standard product20×15×9.5mm SC21×17×9.7mm SC24×18×10mm SC
Output per run14 stones/run20 stones/runPer configuration
Monthly capacity200ct/system·mo300ct/system·moPer configuration
Microwave source MTBF>10000 hrs>10000 hrs>10000 hrs

SIX SYSTEMS

Six Core Systems

From high-power deposition to automated maintenance — fully developed in-house.

  • 1.1
    High-power microwave plasma deposition

    Supports uniform 92mm diamond growth at 10kW, 12mm crystal height, and 15kW/120mm.

  • 1.2
    Crystal growth-rate breakthrough

    At 10kW: FG 8-10μm/h, EF 6-7μm/h, DE 5-6μm/h; high-quality poly (1800W/m·K) at 2μm/h.

  • 1.3
    Polycrystalline deposition

    Supports 102.6mm and 120mm optical-grade polycrystalline and thermal-composite growth.

  • 1.4
    High-grade rough production

    Single run yields 700 ct high-grade rough over 3 months (tested), producing 250 ct polished.

  • 2.1
    Reliable microwave power system

    In-house 10kW E-MG010K industrial source, redundant cooling, MTBF >10,000h, extended warranty on source and head.

  • 2.2
    Multi-source modular architecture

    Seamless switching across 5 microwave-source and 2 MFC brands; quartz/cylindrical/butterfly chambers and 5 gas lines with real-time self-check.

  • 2.3
    Long-life low-noise design

    Optimized sealing and stability, <50dB operation, greatly extended seal life.

  • 2.4
    Extended continuous operation

    1500-hour non-stop validated; chamber needs no special cleaning.

  • 2.5
    Industrial control standard

    ABB and Siemens control systems, high-grade industrial components.

  • 2.6
    Standard rack integration

    19-inch standard industrial rack, supporting multi-system stacking and flexible line expansion.

  • 2.7
    Modular architecture

    Integrates 8 standard modules: air, water, vacuum, electrical, IPC, microwave source, process gas, and SCADA server — plug-and-play coordinated control.

  • 3.1
    Dynamic edge-uniformity control

    Innovative growth-edge control for large-area uniformity in manual/auto modes.

  • 3.2
    Ultra-precise pressure closed-loop

    Pressure stability ±0.005kPa, for high-precision single/poly-crystal deposition.

  • 3.3
    High-flow gas balancing

    Balanced control of high-flow gas lines, avoiding gas-jetting during changes.

  • 3.4
    Thermal-field stability

    Multi-parameter coupled thermal model for stable, even temperatures during auto runs.

  • 3.5
    Production-grade yield

    Single-run yield stable at 2N (99%); ≥93% composite over 7 growth cycles per batch.

  • 3.6
    Control-system optimization

    High-precision rotary-encoder closed-loop control of temperature, pressure, power and time, avoiding touchscreen menu errors.

  • 3.7
    Chamber design optimization

    Coaxial in-chamber injection of microwave field and process gas boosts efficiency and symmetry; new materials/sealing overcome quartz vacuum/temperature limits.

  • 3.8
    Microwave transmission parts

    One-piece waveguide with water cooling; <5°C rise over 1500h high-power/high-methane use; loss/leakage 10% below national standard.

  • 3.9
    Growth-stage component

    One-piece stage greatly extends life; no degradation of surface flatness or thermal conductivity over long use.

  • 4.1
    Real-time monitoring & smart HMI

    Multi-modal visual interface with IPC for real-time parameter monitoring/traceability, reserving interfaces for robotic production.

  • 4.2
    Digital production platform

    Factory-level electronic dashboards for centralized cluster control.

  • 4.3
    Remote collaborative management

    Built-in remote module for cross-platform data and cloud iteration of process parameters across sites.

  • 4.4
    Research-grade networking

    Profinet and TCP/IP for lab information systems, serving university research.

  • 4.5
    Data visualization & analysis

    Real-time deposition imaging and integrated analytics for process control and upgrades.

  • 4.6
    Intelligent process & alerts

    One-touch smart temperature programs reduce errors; real-time fault analysis and alerts for gas, air, water.

  • 4.7
    AI & automation-ready

    Reserved AI software and robotic growth functions.

  • 5.1
    Efficient air-system control

    Independent air control can eliminate the air compressor, cutting energy use and improving stability.

  • 5.2
    Smart thermal management

    Redesigned cooling with special control of heat dissipation/condensation/loss, plus water-quality monitoring and treatment.

  • 6.1
    Rapid maintenance

    Key components are plug-and-play for easy factory servicing.

  • 6.2
    Automated chamber handling

    Auto-eject chamber compatible with robotic arms, greatly improving cleaning efficiency for unmanned lines.

  • 6.3
    Maintenance-free cleaning

    Self-cleaning chamber process reduces maintenance frequency without special chemical cleaning.

GALLERY

Equipment Gallery

Complete systems, control units, and cluster monitoring dashboards.

ENTASK MPCVD diamond growth system
ENTASK MPCVD diamond growth system
MPCVD cluster monitoring dashboard
MPCVD system control unit
MPCVD diamond growth system, front view
MPCVD diamond growth system, side view
Remote monitoring of MPCVD systems
Web-based MPCVD monitoring system

MODEL SHOWCASE · IMAGES COMING SOON

Product PhotoPhotography in progress
GEN-4.5

Gen-4.5 MPCVD System

Photography in progress

Product PhotoPhotography in progress
GEN-5

Gen-5 MPCVD System

Photography in progress

CVD Reactor ChamberPhotography in progress
Plasma GlowPhotography in progress

SPECIFICATIONS

Specifications

Specifications · SPECIFICATIONS
ParameterValue
Available modelsGen-4.5 / Gen-5 (Gen-4 available)
Microwave sourceIn-house E-MG010K, 2450 MHz
Microwave power10 kW / 15 kW
Growth area / crystal height92mm / 12mm at 10 kW; 120mm at 15 kW
Control platformInsightAction, WiseAction
Microwave source MTBF> 10,000 hours
Full-load continuous run> 1500 hours trouble-free
Chamber pressure stability±0.005 kPa
Operating noise< 50 dB
Control systemSiemens s7-1200 + Profinet + IPC vision
Monthly output per system200-300 ct
Record per run856 ctJanuary 2026; combined output of multiple seeds in one run, not one crystal's weight
System priceQuoted per configuration
Lead timeConfirmed per configuration and production schedule

APPLICATIONS

Applications

  • Diamond growers
  • HPHT makers expanding to CVD
  • Universities / research institutes
  • Diamond industry bases

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SUPPLY CAPABILITY

In-house systems, in-house material: the process window is ours to adjust

ENTASK is both an MPCVD system manufacturer and a diamond material producer. The microwave power source (in-house E-MG010K, 2450 MHz, 10 kW / 15 kW), chamber, intelligent controls and growth process are all developed in-house: 10 kW supports uniform growth across a 92mm area with 12mm crystal height, while 15 kW reaches a 120mm growth area. Equipment and process iterate under one roof.

That yields two practical advantages. First, process parameters can be tuned per order, supporting custom non-standard sizes (rough at 30×30×15 / 35×35×12 mm — the largest formats ENTASK has delivered at equal grade: D-E colour, VVS-VS clarity, Type IIa). Second, system reliability directly determines delivery consistency: our in-house microwave source has an MTBF over 10,000 hours and runs 1,500+ hours at full load trouble-free.

ENTASK is ISO 9001:2015 certified, output can be graded by IGI and other leading laboratories, and we supply customers in mainland China as well as India, the Middle East, Europe and the United States.

Microwave power
10 / 15 kW
Growth area / height
92mm / 12mm @10kW · 120mm @15kW
Microwave source MTBF
> 10,000 h
Chamber pressure stability
±0.005 kPa
Single-run yield
≥ 99%